| abstract |
(57) An object of the present invention is to provide a manufacturing method for a semiconductor device which can be subjected to a low temperature heat treatment at the time of forming a silicide layer and can reduce a contact resistance in a fine contact. Openings (7, 8) reaching a semiconductor substrate are formed in an insulating film (6), the surface of the semiconductor substrate exposed in the opening is made amorphous, and the bottom of the opening is amorphized on the surface. The melting point metal film 13 is formed to a thickness of 3 to 10 nm, and the refractory metal silicide layer 15 is formed by heat treatment. Alternatively, after the surface of the semiconductor substrate exposed in the opening is made amorphous, a refractory metal film is formed by chemical vapor deposition. |