| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
1994-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee1c2087ace38fc466b0f4ae770104c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3805d2eab37eba3d826a3fc50353b139 |
| publicationDate |
1996-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0897294-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) [Summary] [Object] To provide a manufacturing method suitable for miniaturization of a CMOS transistor having a salicide structure. [Structure] Polycrystalline silicon film patterns 106aa, 106 After removing the natural oxide film covering the surfaces of the ab, N + type diffusion layers 108 and P + type diffusion layers 109, ECR-PECVD is performed. At least TiCl 4 gas and H 2 gas are introduced into the apparatus, The polycrystalline silicon film pattern 106 is formed at a temperature of about 600 ° C. aa, 106ab and N + type diffusion layers 108 and P Titanium silicide films 111a and 111b are selectively grown on the surface of the + type diffusion layer 109, respectively. The crystal structure of these titanium / silicide films 111a and 111b is C54. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003055767-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100464651-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6004872-A |
| priorityDate |
1994-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |