http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0897285-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
filingDate | 1994-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1263afe4ae4d368d3d5d888d5fc77abe |
publicationDate | 1996-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0897285-A |
titleOfInvention | Method for forming wiring interlayer film |
abstract | (57) [Abstract] [Purpose] By irradiating with ultraviolet light, the charge accumulated on the surface of the wiring pattern is dissociated, there is no underlayer dependency, the film thickness is uniform, and the wiring interlayer film is easy to flatten. A method for forming a wiring interlayer film capable of forming a wiring. [Structure] On a wiring pattern formed on a semiconductor substrate, When forming a wiring interlayer film including at least a plasma TEOS film and an ozone TEOS film, the wiring layer is patterned by a reactive ion etching method to form the wiring pattern, and the plasma C is formed on the wiring pattern. After the plasma TEOS film is formed by the VD method, the surface of the plasma TEOS film is irradiated with ultraviolet light of a predetermined intensity for a predetermined time to dissociate the charges accumulated in the wiring pattern, and then the plasma TEOS film is formed on the plasma TEOS film. The above object is achieved by forming the ozone TEOS film on the substrate. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100247480-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6294484-B1 |
priorityDate | 1994-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.