http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0897281-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1994-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a247053fd0ac70148e64f47eebfda8a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5f9a36be13721aa4ea7a4e7599e86fc |
| publicationDate | 1996-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0897281-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Purpose] To maintain polycide wiring contact ohmic even after heat treatment. [Structure] The polycide wiring composed of the polysilicon layer 4 and the tungsten silicide layer 5 is in contact with the N-type diffusion layer 1 in the contact hole 3a. The polysilicon layer 4 is formed as a polysilicon layer doped with phosphorus "in-situ" by using low pressure thermal CVD. After that, by performing sputtering using tungsten silicide (WSi 2 ) containing phosphorus at a high concentration as a target, the WSi 2 layer 5 containing phosphorus at about 1 × 10 20 to 10 × 10 20 atom / cm 3 is formed. . After that, even if a heat treatment is performed, since the WSi 2 layer 5 is doped with a high concentration of phosphorus, the phosphorus in the polysilicon layer 4 remains in the WSi 2 layer 5. It is suppressed to spread to. [Effect] Since phosphorus of the polysilicon layer 4 does not diffuse, the contact is maintained ohmic, and a contact resistance that is sufficiently low in practical use can be obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009218610-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10321556-A |
| priorityDate | 1994-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.