| abstract |
(57) [Abstract] [Purpose] To provide a method for forming a wiring that does not cause disconnection even when the aspect ratio of a connection hole exceeds 1. [Structure] A step of forming an oxide film 12 on a silicon substrate 11, and a contact hole 1 having an aspect ratio of more than 1 in the oxide film 12. 3, a step of forming the Al wiring film 15 on the entire surface by the bias sputtering method, a step of heating the silicon substrate 11 to cause the Al wiring conductive film 15 to flow into the connection hole 13 and be embedded, and a step of forming the Al wiring film. Al processed And a step of forming wiring. |