http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0897208-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1995-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57057b897e8b52777fb3963ed0d39d4e |
| publicationDate | 1996-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0897208-A |
| titleOfInvention | Plasma-enhanced chemical vapor deposition method and its apparatus, and method for manufacturing multilayer wiring |
| abstract | (57) 【Abstract】 PROBLEM TO BE SOLVED: Good step coverage, capable of burying a space between aluminum wirings of submicron, small amount of water in film, crack resistance, stress migration resistance, through hole property, (EN) A plasma CVD film for a multi-layer wiring interlayer film having excellent insulating properties is provided, which improves yield and cost by reducing the number of steps and achieves high reliability of the multi-layer wiring. SOLUTION: Using TEOS and ozone as a reaction gas, a pulse generator 40 sends a pulse having a cycle of 1 second and a duty of 40% to 60%, and a high frequency power applied from a high frequency power supply 36 and 39 to a shower electrode 19 is cycled. By turning on / off for 1 second at a duty of 40 to 60%, TEOS of about 1 nm and heat CV of ozone D film formation, thermal CVD film modification to plasma film, about 10 The formation of the plasma TEOS / CVD film of nm is repeated. As a result, an interlayer insulating film having the same film quality as the plasma TEOS / CVD film and excellent in step coverage and fine wiring embedding property is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6750137-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009104531-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6372670-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007080811-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002198364-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023281792-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6514855-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014013905-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009104531-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007284791-A |
| priorityDate | 1995-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.