http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0894577-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 1994-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_416a5db110c1c230284d164f21f984ec |
| publicationDate | 1996-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0894577-A |
| titleOfInvention | Semiconductor ion sensor and method of using the same |
| abstract | (57) [Summary] [Purpose] To reduce the influence of the measurement environment (light and temperature, etc.) and realize an ISFET in which the ion sensitive film is easily activated, and improve the reliability of the measurement. [Structure] 1) An ion sensor using a MOS FET, in which a semiconductor layer in which a source, a channel region, and a drain are laterally formed in this order on a substrate via a first insulating film, and on the semiconductor layer A semiconductor ion sensor having an ion-sensitive film deposited via a second insulating film and a gate electrode facing the channel region and separated from the channel region and embedded in the first insulating film; ) The thickness of the semiconductor layer is 0.1 μm or less, 3) sensitivity is adjusted by changing the voltage applied to the gate electrode to adjust the potential of the channel region, 4) applying voltage to the gate electrode, The channel region is turned on and a drain current is flown to heat the channel region to desorb adsorbed ions from the ion sensitive film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8502277-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772099-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002296228-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9506892-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8766326-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008542733-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005022134-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100746863-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100746867-B1 |
| priorityDate | 1994-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 23.