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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-04
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filingDate 1994-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d3d34dd234a1e973d18bb9040a31c08
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publicationDate 1996-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0892470-A
titleOfInvention Resin composition for semiconductor device transport container
abstract (57) [Summary] [Structure] A resin composition for a semiconductor device transporting container, which contains the following components (A) to (E) in the following mixing ratio. (A) Thermoplastic polyester 20-45% by weight (B) Propylene-based resin 5-15% by weight (C) Propylene-based elastomer 5-15% by weight (D) Mica 10-45% by weight (E) Conductive carbon black 5 -30% by weight [Effects] Degassing of volatile impurities in IC allows long-time baking at a high temperature of 150 ° C, which was not possible in the past, and improves warp deformation due to rapid cooling after baking. It is possible to obtain a container having good impact strength and electrostatic level.
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