http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0882926-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022
filingDate 1995-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbdeb35ed9bb63e0b282d7997935ef68
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publicationDate 1996-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0882926-A
titleOfInvention Method of manufacturing resist pattern for semiconductor device
abstract (57) [Summary] [Structure] (A) A weight ratio of naphthoquinone-1,2-diazidosulfonic acids of 2,3,4-trihydroxybenzophenone to 2,3,4-trihydroxybenzophenone is 20:80 or more. A photosensitive component contained in a ratio of 55:45 and (B) a novolak resin having a weight average molecular weight of 25,000 or more (in terms of polystyrene) are dissolved in an organic solvent in a weight ratio of 1: 9 to 1: 1. To prepare a positive photoresist solution, then apply this solution on a substrate for semiconductor devices, dry it to form a photosensitive layer, and selectively irradiate it with actinic rays, and then only the exposed area with an alkaline solution. A resist pattern for a semiconductor device is manufactured by melting and removing. [Effect] A resist pattern having high sensitivity and excellent in heat resistance and dry etching resistance can be obtained without generating scum during development.
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