http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H088248-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1994-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6df168eadc1646976f07509a6ee4bb1f |
| publicationDate | 1996-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H088248-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Purpose] To suppress the erosion of the underlying wiring and improve the reliability of the wiring without deteriorating the film quality of the thick inorganic SOG film during firing. [Structure] 1) Wiring composed of refractory metal or its alloy at least in the surface layer on the semiconductor substrate 1; 2A, 2B is formed, and an inorganic spin-on-glass (SOG) film 4 is coated on the semiconductor substrate 1 so as to cover the wiring and whose molecular end is sealed with protons and has a silazane bond in the skeleton. 2) firing the inorganic SOG film 4. 2) The refractory metal is tungsten or titanium, and the alloy thereof is titanium nitride. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6767641-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6074939-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6191002-B1 |
| priorityDate | 1994-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.