| abstract |
(57) [Summary] (Modified) [Object] To provide a semiconductor circuit having a thin film transistor (TFT) circuit having a low leakage current TFT and a TFT capable of high-speed operation, and a method for manufacturing such a circuit. To do. [Structure] A substance having a catalytic element is adhered to the amorphous silicon film 12 selectively, or a catalytic element is selectively introduced into the amorphous silicon film, and a laser or a laser equivalent to it is applied to the amorphous silicon film 13. Crystallize by irradiating with light. Then, the crystalline silicon region containing less catalytic element is used for the TFT used in the pixel circuit of the active matrix circuit, and the crystalline silicon region containing more catalytic element is used in the TFT used in the peripheral drive circuit. |