http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0875699-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 1994-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f682507e68a9cacdb3b66a7739b550f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac97a652a519ab12e8a2eebc66f2507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76c78c88fd3c295edc96f4b28907608e |
| publicationDate | 1996-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0875699-A |
| titleOfInvention | Flexible multi-ion sensor |
| abstract | (57) [Summary] [Structure] One or more insulated gate field effect transistors are provided on a silicon substrate, and a second support having a hole is provided at a portion corresponding to the gate portion and the electrode portion. In a structure having an ion-sensitive film and a reference electrode formed therein, it is possible to form a structure in which the ion-sensitive film and the reference electrode on the structure are in convex contact with a flow path through which a fluid such as a liquid flows, An ion sensor card comprising a signal processing circuit for an ion sensitive film and a reference electrode. [Effect] The electrode performance can be maintained for a long period of time without causing a carry-over problem due to stagnation at the joint between the ion sensitive film of the sample and the substrate in the sample channel. |
| priorityDate | 1994-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.