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filingDate 1994-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cb18fd65cd4a321b302f08f1c738c14
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publicationDate 1996-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0859297-A
titleOfInvention Method for manufacturing nesa film having fine pattern
abstract (57) [Abstract] [Purpose] To inexpensively and easily form a nesa film having a delicate pattern having a line spacing and a line width of 30 μm or less on a glass substrate by a so-called lift-off method using a photoresist. It is to provide a method that can. [Structure] A photoresist is coated on a glass substrate, exposed through a mask, and then developed to form a photoresist film having a desired pattern. First step, a photoresist film having the above pattern is formed. The second step of forming a Nesa film on the entire surface of the glass substrate, and then removing the photoresist film on the glass substrate together with the Nesa film thereon.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002208324-A
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