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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 1994-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac5a1790701329eec7bdeea379cb30d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0236b6c4a6459e2b0498ca1312964474
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publicationDate 1996-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0855803-A
titleOfInvention Thin film manufacturing method
abstract (57) [Summary] [Object] An object of the present invention is to provide a thin-film manufacturing method in a single-wafer LPCVD method in which the thickness of a deposited film does not fluctuate between relatively early cycles of continuous deposition processing. . [Structure] Prior to continuously performing vapor deposition on a wafer, a preliminary step of forming the same thin film on an exposed surface such as a susceptor in a process chamber is performed. If a thin film having a certain thickness or more is previously formed on the susceptor or the like and vapor deposition is continuously performed on the wafer, the temperature in the process chamber does not fluctuate during each cycle of the continuous vapor deposition. As a result, the thickness of the thin film deposited on each wafer becomes constant, so that a thin film manufacturing method with high yield is provided.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004086475-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837271-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008205517-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015204325-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460932-B2
priorityDate 1994-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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