| abstract |
(57) [Summary] [Objective] To provide means for timely adjusting the annealing conditions of semiconductors using laser light. In an annealing process of irradiating a semiconductor thin film with laser light, the refractive index of the semiconductor thin film after the laser light irradiation is measured, and the irradiation condition of the next laser light is adjusted based on the measured value. For example, by adjusting the laser light irradiation conditions so that the semiconductor thin film always has the same refractive index, even if the laser light irradiation conditions inevitably change, it is always the same every time the laser light is irradiated. Annealing can be performed under the conditions. |