| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1994-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c2a67fb99e7382117013c02604c37c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_feb4eeea50bac514efdd1d5791d90249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_090d5e6e668ef9f0c44e2fc2656acff0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8387ab828a3579a40a7fc17579a248d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c44c99e0387b3532778583dc794e5597 |
| publicationDate |
1996-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0846207-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) Abstract: In a thin film transistor having a gate electrode covered with an oxide film, a method for reducing the sheet resistance of a source / drain region by using silicide for most of the region is provided. [Structure] Impurities are obliquely introduced into a silicon active layer by using a gate electrode formed on the silicon active layer and having an upper surface and a side surface covered with anodic oxide as a mask, An impurity region is formed. Then, a metal film for forming a silicide is formed in close contact with the impurity region and reacted with silicon in the impurity region to form a silicide region. Then, the unreacted metal film is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000200910-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7816258-B2 |
| priorityDate |
1994-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |