http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08330585-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1995-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e8bd31f01d2aa87a13c6ea840b9f9c |
| publicationDate | 1996-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08330585-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [Abstract] [Purpose] For a high breakdown voltage MOS transistor, a high breakdown voltage, high integration and high current capability MOS transistor is manufactured. [Structure] In a high breakdown voltage MOS transistor, by using high energy ion implantation and photoresist ashing to form a low concentration layer of the high breakdown voltage MOS transistor, the junction depth in the channel direction can be gradually reduced. Therefore, the channel length of the high breakdown voltage MOS transistor can be shortened. Moreover, since the junction depth of the source and drain regions in the region other than the vicinity of the gate can be increased, the current capability of the high breakdown voltage MOS transistor can be improved. Therefore, it is possible to manufacture a MOS transistor having high breakdown voltage, high integration, and high current capability. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105895520-A |
| priorityDate | 1995-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.