| abstract |
The present invention provides a high frequency integrated circuit device for mobile communication such as a mobile phone which is small in size and can reduce the number of manufacturing steps, and at the same time can be configured with a circuit that consumes a large amount of power due to low thermal resistance. A ceramic multilayer substrate (2) having a recess (12) The chip component 3 is disposed on the surface of the semiconductor chip 1 and the semiconductor chip 1 is disposed in the recess, and the wiring pattern of the bias circuit or the high frequency matching circuit that requires low resistance is widened to be formed on the surface layer or the inner layer of the ceramic multilayer substrate 2. High-frequency integrated circuit device with a three-dimensional circuit configuration. The semiconductor chip 1 arranged in the concave portion and the concave portion intermediate surface 14 provided inside the concave portion are connected by a wire as a connecting means, and the potting resin 7 covering them is in the concave portion 12 and the ceramic multilayer substrate 2 A high-frequency integrated circuit device with a structure that does not protrude outside the surface. A high frequency integrated circuit device in which a protective coating material 16 is applied on the chip component 3. |