http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08321542-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
filingDate 1995-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_874f10b07a12f471f364b55f395b1702
publicationDate 1996-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08321542-A
titleOfInvention Method of forming connection structure and method of manufacturing semiconductor device
abstract (57) [Summary] [Object] To provide a technique capable of forming a connection hole at a desired location even if misalignment of resist patterning occurs during formation of a connection structure or manufacture of a semiconductor device. When forming the connection hole 1 between the conductive portions, the contact connection hole portion area S 1 between the upper conductive portion and the base materials 4 and 5 for making electrical connection is formed smaller than the opening area S 2 above the connection hole. In addition, two or more interlayer insulating films having different compositions are used. 3 (for example, the upper layer film 2 is plasma SiNx containing H and the lower layer film 3 is a Si-based oxide film such as a TEOS film), and a multilayer structure of two or more layers having different compositions is used as the upper layer film 2. The laminated structure has a relationship of etching rate <etching rate of the lower layer film 3.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6482696-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110896035-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110896035-B
priorityDate 1995-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680

Total number of triples: 17.