| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1994-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80d358369a3a91fdaab2f06adf08bbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01586b738d5c3da823a8b306e0b71efa |
| publicationDate |
1996-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0832078-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) [Abstract] [Purpose] To reduce the value of OFF current in thin film transistors. [Structure] A side surface of an active layer forming a thin film transistor is annealed by irradiation with laser light. Defects generated during patterning are concentrated on the side surface of the active layer, The movement of carriers due to this defect causes an OFF current. Therefore, by improving the crystallinity of the side surface of the active layer to reduce the defects, The current can be reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7312483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10377649-B2 |
| priorityDate |
1994-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |