http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08316276-A

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filingDate 1996-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2c29f0c277574b198532257e2dfb768
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publicationDate 1996-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08316276-A
titleOfInvention Charge measuring device
abstract Apparatus for measuring charge in oxide on silicon substrate containing very dense product chips characterized by thick oxide, high substrate doping level in the field region. I will provide a. A specially configured extremely thin conductive probe 5 is pressed against an oxide layer 6 whose charge is to be measured. A bias is applied to the probe to bias the underlying silicon surface to overlap or reverse. The intensity-modulated light beam is focused on the contact point of the probe. The amplitude-modulated photovoltage is detected and input to the computer 10, and the value of the oxide charge is taken out from the computer.
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priorityDate 1995-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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