http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08316237-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1995-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a0ea6d927e4c138a9b64bcc3d06cf07 |
| publicationDate | 1996-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08316237-A |
| titleOfInvention | Method for forming pattern of semiconductor device |
| abstract | (57) [Abstract] [Purpose] A method for forming a pattern of a semiconductor device, which has a surface reaction process which does not swell and is easy to peel off after the process, or which can reduce the number of steps and reduce the device production cost. provide. [Structure] Silicon oxide film 1 is formed on a silicon substrate 11. 2. A film in which a tungsten film 13 is further stacked is used. Trimethylgermane [(CH 3 ) The polygermane film 14 is deposited by plasma CVD (chemical vapor deposition) method using 3 GeH] as a source gas. Next, reduction projection exposure is performed using an ArF excimer laser in an oxygen atmosphere to form a latent image. In this latent image, the polygermane film 14 is photoexcited and oxidized to form the polygermyloxane film 15. Next, the polygermane film 14 and the tungsten film 13 are successively etched in this order by plasma etching using a mixed gas of chlorine and oxygen to obtain a tungsten pattern 16. Next, the polygel milloxane film 15 remaining on the tungsten pattern 16 is immersed in fuming nitric acid to dissolve and remove it. |
| priorityDate | 1995-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.