| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
1995-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa781a02dc77102bac516884f45129a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a057394ed8ac90b1357be0f83b0a1a96 |
| publicationDate |
1996-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08306684-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) [Summary] [Structure] An insulating film is formed by CVD using fluorosilane and an oxidizing gas. [Effect] The F-doped SiO 2 film having a high formation rate and excellent step coverage can be formed, and the wiring capacitance can be reduced. |
| priorityDate |
1995-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |