http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08306631-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1995-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17531148d5f08bde5de1665204ed4c46 |
| publicationDate | 1996-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08306631-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Objective] The present invention is directed to metal organic chemical vapor deposition (MOCV). Regarding the selective growth of the laminated film of the compound semiconductor layer by the method D), the projection of the contour of the laminated film is reduced. [Structure] In the case of selectively producing a laminated structure of a III-V group compound semiconductor by a metal organic vapor phase epitaxy method on a semiconductor substrate whose non-growth region is covered with a mask material, chlorine is added to a vapor phase growth gas. To do. |
| priorityDate | 1995-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.