http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08306304-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 |
| filingDate | 1995-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9b0bbb881c63bd1ccc183f4c0959d4c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c0ce27be5795461f2c9b8111cbe75d2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87767e8d2e3ed07b157745ad2475b604 |
| publicationDate | 1996-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08306304-A |
| titleOfInvention | Method for manufacturing field emission type electronic device |
| abstract | (57) [Abstract] [Purpose] To reduce the damage given to the substrate and increase the emission current per electron emission cold cathode chip. [Structure] The surface of a silicon substrate 11 was thermally oxidized to form a first thermally oxidized silicon layer 12, and then a photoresist pattern 13 was formed at a location where a cold cathode chip was formed. Using the photoresist pattern 13 as a mask, the first thermal silicon oxide layer 12 was etched by the RIE method to form a thermal silicon oxide pattern 12a, and then the photoresist pattern 13 was removed. Using the thermally-oxidized silicon pattern 12a as a mask, the silicon substrate 11 was processed by the ECR etching method to form a convex portion 11a protruding from the silicon substrate 11 and having a conical shape and serving as a base of the electron emission cold cathode chip. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100485129-B1 |
| priorityDate | 1995-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.