| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1996-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f18cf82aaf36e79b96f371fa475b12d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93c4aebc63d98d43adf70b5a593049ea |
| publicationDate |
1996-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08298262-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) Abstract: A dielectric layer on a substrate is deposited smoothly and at high speed. A mixed gas discharged from an outlet of an upper electrode is converted into plasma by a first application device to deposit a dielectric material on a substrate, and at the same time, back sputtering of the deposited dielectric material is performed by a second application device. The inclination angle of the sidewall of the dielectric material is set to about 60 degrees or less. |
| priorityDate |
1984-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |