| abstract |
(57) [Summary] [Structure] In the negative resist composition comprising (A) an alkali-soluble resin, (B) a compound that generates an acid upon irradiation with radiation, and (C) a cross-linking agent, the (A) component As an alkali-soluble resin of, a weight average molecular weight of 1,000 It is a negative resist composition using a polyhydroxystyrene-based resin having a molecular weight distribution of 1 to 1.4 that does not include a low molecular weight portion of less than 1. [Effect] This negative resist composition is capable of providing a resist pattern having high resolution without generation of microbridges, has high sensitivity, and is suitably used for manufacturing semiconductor elements, liquid crystal elements, and the like. To be |