http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08288272-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-515
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filingDate 1995-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad
publicationDate 1996-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08288272-A
titleOfInvention Helicon wave plasma CVD method
abstract (57) [Abstract] [Purpose] C in which the dissociation state of the CVD source gas and the ion current density distribution in the chamber in the helicon wave plasma device are controlled freely, and the in-plane uniformity is high even for large diameter wafers. Perform VD. [Structure] A single loop antenna 6 for m = 0 mode plasma excitation facing a top plate 2 of a plasma generation chamber 1, and a m = 1 mode half turn for plasma excitation that circulates a side wall of the chamber. Antenna 7 is installed, By operating the switch 12, either the normal high-frequency power source 13 or the pulse power source 14 is connected to both antennas 6 and 7, and the two modes of the helicon wave plasma P H are adjusted while the respective outputs are adjusted by the drive amplifiers 62 and 72. Simultaneous continuous generation or the same time intermittent generation is performed. A switch 82 connected to the outer solenoid coil 8b is used for plasma transportation. Control with. [Effect] Even a fine inter-wiring space can be satisfactorily filled with the SiOx interlayer insulating film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007208134-A
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priorityDate 1995-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.