| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24942 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1995-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9934a598cd583e27c414b483e37a9217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_333c3ebc59dec63b6314d03b25761ecb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04a1e12b590db4451f5298ac959b6b51 |
| publicationDate |
1996-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08279507-A |
| titleOfInvention |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, 3-ELEMENT DIELECTRIC COMPOUND, USING THE SAME, AND DIELECTRIC COMPOUND LAYER MANUFACTURING METHOD |
| abstract |
(57) 【Abstract】 PROBLEM TO BE SOLVED: To effectively secure adhesion between layers regardless of its chemical constitution and enhance its surface characteristics. SOLUTION: A step of forming a first layer 3 of a dielectric material on at least a part of a structure provided on a substrate 1 of a semiconductor material, and a dielectric material overlaid on at least one region of the first layer 3 Forming the second layer 5, the method of manufacturing a semiconductor device comprising: The method further comprises the step of forming an intermediate adhesive layer 6 containing a three-element compound of silicon, oxygen and carbon in a region where the layer 5 is overlapped. |
| priorityDate |
1994-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |