http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08279500-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
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filingDate 1995-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_570e3116174dfb84048c7f3d5972a827
publicationDate 1996-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08279500-A
titleOfInvention Method of forming insulating film
abstract (57) [Abstract] [Purpose] Regarding the method for forming an insulating film, the dielectric constant is SiOF. Provided is an interlayer insulating film composed of an organic insulating film which is lower than the film and has excellent heat resistance. [Structure] Glassy carbon film 2 on silicon substrate 1 Is deposited, the silicon substrate 1 is exposed to a fluorinated atmosphere 3 to fluorinate the glassy carbon film 2 and convert it into a fluorinated glassy carbon film 4.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11091830-B2
priorityDate 1995-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 19.