http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08263991-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_216a7faed04ec9497c9819cc03c04599 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
filingDate | 1995-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28e28ddf78b28cd73245e8da96fc33d4 |
publicationDate | 1996-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H08263991-A |
titleOfInvention | High voltage generation circuit for semiconductor nonvolatile memory device |
abstract | (57) [Summary] (Modified) [Configuration] The high-voltage generation circuit 11 has at least one of the same structure as the metal-silicon oxide film-silicon nitride film-silicon oxide film-semiconductor type memory transistor that constitutes the memory block. The memory transistor is composed of the above-mentioned memory transistors and the same number of capacitors 21 as the memory transistors. The memory transistors have their gates and sources connected to each other. High voltage generation circuit for semiconductor non-volatile memory device whose terminals alternately input reverse phase clocks. [Effect] By using the MONOS type memory transistor having the same structure as the memory block, the threshold voltage is lowered, the number of stages of the MONOS type memory transistor can be reduced, the chip area can be reduced, and the manufacturing mask can be increased. Suppress the increase in manufacturing process steps. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100621611-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011148898-A1 |
priorityDate | 1995-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.