http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08263991-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_216a7faed04ec9497c9819cc03c04599
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
filingDate 1995-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28e28ddf78b28cd73245e8da96fc33d4
publicationDate 1996-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08263991-A
titleOfInvention High voltage generation circuit for semiconductor nonvolatile memory device
abstract (57) [Summary] (Modified) [Configuration] The high-voltage generation circuit 11 has at least one of the same structure as the metal-silicon oxide film-silicon nitride film-silicon oxide film-semiconductor type memory transistor that constitutes the memory block. The memory transistor is composed of the above-mentioned memory transistors and the same number of capacitors 21 as the memory transistors. The memory transistors have their gates and sources connected to each other. High voltage generation circuit for semiconductor non-volatile memory device whose terminals alternately input reverse phase clocks. [Effect] By using the MONOS type memory transistor having the same structure as the memory block, the threshold voltage is lowered, the number of stages of the MONOS type memory transistor can be reduced, the chip area can be reduced, and the manufacturing mask can be increased. Suppress the increase in manufacturing process steps.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100621611-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011148898-A1
priorityDate 1995-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.