http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08250798-A
Outgoing Links
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|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2302-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3434 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34326 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1995-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9efbede7c8f653e6e6ccd81c0eae7d7 |
| publicationDate | 1996-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08250798-A |
| titleOfInvention | Multiple quantum well structure optical semiconductor device and manufacturing method thereof |
| abstract | (57) [Abstract] [Objective] In a multi-quantum well structure semiconductor laser, a threshold value is reduced, differential quantum efficiency is improved, and temperature characteristics are improved while ensuring reliability. [Structure] Well layer of multiple quantum well is formed by compressive strained InGaAsP The barrier layer is made of InGaAlAsP, the well layer and the barrier layer have a constant molar ratio of As and P, and a constant ratio of In to Ga. When this multi-quantum well is grown by the metalorganic method, a growth gas containing As, P, In and Ga continues to flow at a constant flow rate in the well layer and the barrier layer, and the interface between the well layer and the barrier layer is simply Al. The feature is that it is performed only by turning on / off the supply of the gas containing the gas. [Effect] Since the well layer is Al-free, the reliability is stable. As for the band structure, the level of light holes disappears from the well, and the band discontinuity on the electron side increases, so that the optical gain is improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004319760-A |
| priorityDate | 1995-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.