http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08250718-A

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filingDate 1995-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a0e00e13f6ba77d863f12dd726054ee
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publicationDate 1996-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08250718-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (57) [Summary] [Objective] A semiconductor device having a double diffusion structure and having a gate electrode is characterized in that individual input / output characteristics can be easily adjusted after manufacturing. A P type channel well 13 is provided on the surface of an N − type substrate 11, and an N + type source region 15 is provided in the channel well 13. further, A gate electrode 18 is provided on the channel well 13 with a gate oxide film 17 interposed therebetween. In the inside, a floating gate electrode 19 in a floating state is provided at a position corresponding to a partial region of the channel well 13 on the side in contact with the source region 15.
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priorityDate 1995-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.