| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate |
1995-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7f715073931c42bf7975b61870ca6f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d49a87e10c83bace913a01404b20428f |
| publicationDate |
1996-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08250437-A |
| titleOfInvention |
Metalorganic vapor phase growth method |
| abstract |
(57) [Summary] [Object] To provide a metalorganic vapor phase epitaxy method capable of forming a steep hetero interface in the production of InGaAsP multilayer structures having different compositions. [Structure] After the growth of the InGaAsP well layer, it is waited in the group V AsH 3 and PH 3 having the well composition, and then in the group V gas having TBP before the growth of the InGaAsP barrier layer having a smaller As composition than the well layer (waiting for TBP). Process) After that, a barrier layer is grown. [Effect] TBP has a decomposition temperature of about 100 ° C compared to PH 3. Since the phosphorus pressure is 5 times or more higher at the same low growth temperature and the same V / III ratio, desorption of arsenic adhering to the inside of the growth furnace and group V atoms at the growth interface can be suppressed by the high phosphorus pressure. Therefore, InG In the aAsP multi-layer film growth, TB was used in the group V standby process before the growth of the InGaAsP layer having a smaller arsenic composition than the previous layer. By using P, it is possible to suppress the residual or desorption of arsenic at the interface and realize a steep hetero interface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008300735-A |
| priorityDate |
1995-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |