http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08236649-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 1995-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf1c34d006bdfd32907acf3b77d5c557 |
| publicationDate | 1996-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08236649-A |
| titleOfInvention | Method of manufacturing nonvolatile semiconductor memory device |
| abstract | (57) [Summary] [Object] To provide a method for manufacturing a non-volatile semiconductor memory device capable of miniaturization. [Structure] Source diffusion layer 11 of floating gate 3 A source electrode layer 7 connected to the source diffusion layer 11 via the capacitance insulating film 6 is formed on the side wall portion on the side, and the side wall portion is used to make the floating gate 3 and the source diffusion layer 11 non-volatile with a strong capacitive coupling. The semiconductor memory device can be manufactured, and the overlapping portion of the floating gate and the source diffusion layer is extremely reduced as compared with the conventional nonvolatile semiconductor memory device, and the nonvolatile semiconductor memory device having a small cell size can be manufactured. it can. |
| priorityDate | 1995-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.