| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
1995-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42a6d60610547848947d6fda867f031a |
| publicationDate |
1996-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08222562-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) [Abstract] [Purpose] It is possible to remove highly corrosive halides remaining in the metal nitride film formed by the CVD method. Corrosion of Al wiring can be suppressed. [Composition] A step of forming a metal nitride film by a chemical vapor deposition method using a halogen compound as a source gas, and then, And removing impurities remaining in the metal nitride film by oxidizing. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110724932-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017168644-A |
| priorityDate |
1995-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |