| abstract |
(57) [Summary] [Object] To provide a method for producing a fluorinated amorphous carbon film, which is being considered for use in a semiconductor device, a mounting substrate, etc., at high speed and with good quality. [Structure] A fluorinated amorphous carbon film is formed using a high-density plasma source having a structure in which a plasma generating portion and a substrate to be deposited are separated. When such a high-density plasma is used, the radical density contributing to film formation can be increased, so that the film formation rate can be increased. Further, by separating the plasma generating part and the depositing part, the ion energy can be suppressed to be small, so that the etching reaction is suppressed and the fluorinated amorphous carbon film can be deposited without adding a hydrogen source. Become. Further, by applying high-frequency power to the substrate to be deposited and changing the bias voltage, the energy of ions can be optimized, and the film quality such as heat resistance of the film can be improved. |