| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-3359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-3351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-33525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-3357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-3353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-3355 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-335 |
| filingDate |
1995-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19693ec7ca5659f6c34372ce85c8b049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a13c475fd6387a5623e8ea3aec25e619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54712be764839615b74797676fc35ff5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4aa12ff2094ae2b0bfaab1d0f15c5b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ef491e540ad30a5f1fc1b928221282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eaea71a24554d4338ee150e08f7c420 |
| publicationDate |
1996-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08207335-A |
| titleOfInvention |
Thin film thermal print head |
| abstract |
(57) [Abstract] [Purpose] In thin-film thermal print heads, to avoid printing defects due to electrostatic breakdown, to improve durability, and to respond to higher printing speeds without degrading printing quality. To be able to. A conductor layer having a predetermined planar shape is formed on a resistor layer formed on an insulating substrate so that the resistor layer exposed without being covered by the conductor layer functions as a heat generating portion. At the same time, a thin-film thermal print head in which at least the heat-generating portion or the surface in the vicinity thereof was covered with a protective layer, and a conductive layer having a predetermined resistance value was formed so as to further overlap with the protective layer. The conductive layer is preferably or sputtering a SiC-ZrB 2 mixed layer mixing molar ratio of ZrB 2 is a 5 to 20% CV The film is formed by D. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114434975-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7876343-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7791625-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003182224-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7098168-B2 |
| priorityDate |
1995-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |