http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08204253-A

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filingDate 1995-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60c26810efd8e04046290882909e4235
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publicationDate 1996-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08204253-A
titleOfInvention Magnetoresistive film
abstract (57) [Summary] [Object] To provide a magnetoresistive film having a large rate of resistance change with a small external magnetic field for an MR element for reading magnetic field strength as a signal from a magnetic recording medium. A magnetoresistive effect film comprising an artificial lattice in which a magnetic layer and a soft magnetic layer, which are exchange-coupled with an antiferromagnetic material and are given a coercive force, are laminated via a nonmagnetic layer. Is an oxide antiferromagnetic material or antiferromagnetic material superlattice (or permanent magnet film) 6. Next, as a base of the sandwich film composed of the magnetic thin film 3, the non-magnetic thin film 1, and the magnetic thin film 4, the thickness 1 A 0-60 angstrom bcc Fe thin film 2 is inserted. Further, an antiferromagnetic material (or a permanent magnet material) 7 is formed on this to make the magnetic thin film 4 into a single magnetic domain. As a result, a magnetoresistive film exhibiting a large resistance change with a small external magnetic field is obtained.
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