| abstract |
(57) [Abstract] [Purpose] An interlayer insulating film of a semiconductor device, which can be formed without using a new device, and which can form a low dielectric constant interlayer insulating film with good film quality and good filling characteristics. A forming method is provided. [Structure] TEOS is added with C 2 F 6 or NF 3 as a fluorine source to form a SiOF film (CV) on a stepped substrate 24 of a semiconductor device. A D film) 25 is formed (B). Next, the SiOF film 25 is subjected to a surface treatment to reduce water repellency or improve hydrophilicity. For example, plasma treatment with an oxidizing gas or ion implantation with an ion species that improves hydrophilicity is performed. Next, O 3 / T is formed on the surface-treated SiOF film 25. An EOS film (CVD film) 26 is formed. |