http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08202015-A

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filingDate 1994-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3485b9a0749fc1fa3a429cacb7b29211
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publicationDate 1996-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08202015-A
titleOfInvention Phase shift mask and manufacturing method thereof
abstract (57) [Summary] [Object] An object of the present invention is to provide a phase shift mask having a fine and highly accurate phase shifter without impairing the light transmittance, and a method for manufacturing the same. [Structure] A phase shifter 2A, 2B, 2C made of an LPD film is provided on a quartz substrate 1. First, a photoresist pattern is formed on a quartz substrate. Immersing this quartz substrate in a silicon oxide supersaturated solution of hydrofluoric acid, A SiO 2 film is formed by depositing silicon oxide from a supersaturated solution on the exposed surface of the quartz substrate that is not covered with the resist pattern. Then, the resist pattern is ashed and removed by oxygen plasma. The SiO 2 film remaining on the quartz substrate 1 functions as a phase shifter. Since an additive for improving the flexibility of the phase shifter is unnecessary, it is possible to provide a phase shift mask having a phase shifter with a uniform film thickness, without causing a decrease in light transmittance and a volume shrinkage during firing.
priorityDate 1993-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.