http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08193272-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1995-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b56a9efa21d5b1c982f3e49ff2cc8e5 |
| publicationDate | 1996-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08193272-A |
| titleOfInvention | Method for forming copper thin film |
| abstract | (57) [Abstract] [Purpose] An object of the present invention is to provide a method for forming a copper thin film having good film quality and capable of high-speed film formation. A first chamber in which plasma is generated and a second chamber in which a substrate is placed are separated from each other, and a desired gas is supplied to the first chamber and at the same time, plasma is generated by microwave or high frequency to generate the gas And introducing the excitation gas into the second chamber, supplying a source gas consisting of a β-diketone copper complex to the second chamber, and decomposing the copper complex with the excitation gas. It is characterized by depositing copper on the substrate surface of the chamber. |
| priorityDate | 1995-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.