http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08193267-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08 |
| filingDate | 1995-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baf6791a0fbd6e0a717babf66b2eca16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa8531cf6852972202b32d16b7ff615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98c59ccf60254495c163f588369fcc3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_167f76e0aedc4cd34b8e614532b6c826 |
| publicationDate | 1996-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08193267-A |
| titleOfInvention | Metal thin film deposition method |
| abstract | (57) [Summary] [Structure] In the process of forming a metal thin film on a semiconductor surface having a fine structure with a high aspect ratio by using a metal halide such as titanium tetrachloride, vibrationally excited hydrogen molecules are used as a reaction surface. The chlorine atoms bonded to titanium or the like are eliminated as hydrogen chloride molecules, the surface reaction proceeds at a low temperature, and the residual concentration of chlorine that causes corrosion is reduced. [Effect] It is possible to form a uniform and good-quality metal thin film on a semiconductor surface having a fine structure with a high aspect ratio under a condition of lower temperature than conventional. |
| priorityDate | 1995-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.