http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08188877-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
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filingDate 1995-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e250174319f7cfc6477e77092bf5e801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2495dbb8a5a2e751656bcd304d75cfaa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c906fa7d95cea4b6a6b9c6b0b1eeaf7d
publicationDate 1996-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08188877-A
titleOfInvention Method and apparatus for forming TiN film
abstract (57) [Summary] [Structure] TiCl 4 using electron cyclotron resonance And a plasma of a gas containing H 2 and N 2 is generated, and the radial distribution of the magnetic field in the direction perpendicular to the sample mounting surface has a maximum value outside the mounted sample. By using a magnetic field whose maximum value is 140 Gauss or more larger than the value of the peripheral portion of the mounted sample, the generated plasma is irradiated to the sample mounted on the sample table to form a TiN film on the sample. Method of forming a film. [Effect] By improving the magnetic field distribution on the wafer, T The Cl content in the iN film can be reduced, and a film can be formed on the bottom of the contact hole with good step coverage.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003524285-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100722847-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5000061-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017201055-A
priorityDate 1995-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.