http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08184638-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d107b35f2512d0630fdf32bb7ab5c994
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C5-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 1994-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f224afc31bc945382b134fbd5dd39dac
publicationDate 1996-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08184638-A
titleOfInvention Burn-in test device
abstract (57) [Summary] [Purpose] In a burn-in test of a semiconductor device, it responds in a short time and prevents thermal damage to other non-defective devices, sockets, printed circuit boards, etc. Provided is a burn-in test element capable of discriminating a defective device with high reliability. [Structure] TiPd system having a composition in which Ti is 49 to 51 atomic% and the balance is substantially Pd, or a part of Pd is at least selected from Ni, Cr, Fe, Co, V, Mn, and W. By constructing the burn-in test element with a tubular memory alloy that is replaced by one or more, a burn-in test element that meets the above-mentioned purpose was realized.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018141207-A
priorityDate 1994-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583196
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104727

Total number of triples: 15.