http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08181284-A

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filingDate 1995-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdec9c378c3b2d1a08470c91234b1d67
publicationDate 1996-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08181284-A
titleOfInvention Protective element and manufacturing method thereof
abstract Kind Code: A1 Abstract: A protective element is provided for a gate of a MOS transistor (220, 230) and an oxide connection line 206 of a MOS capacitor (340, 250) to prevent destruction of a thin insulating layer due to plasma charging. 202 is connected. Protection element 202 Is used in the off state by the MOS transistor. The parasitic lateral transistor 210 in the open base state absorbs the collected charge from the line 207.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100372392-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005136290-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7791514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006173194-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1359620-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4507091-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018522410-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4570662-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6392268-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6503797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1359620-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009171173-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100333107-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6600176-B2
priorityDate 1994-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Incoming Links

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Total number of triples: 34.