| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
1994-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6fb45ce2ae23ff6f01385d0adbdb06b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b084299e7043f53e2b87847f2e6749ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a0af0ebdad67183bc10fb68e4b3eaf0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6baaa72a0d224217a722939ccbcf0be0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb6eaf2414d02c58109f11a850c40d01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ae09916e0ead6fae614580acb172783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acfd01fb69375266defb45f5b87ffbcd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3344bdc78e1c84f7964e4c43409398e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_603042fe164c6f6482a660109ce95463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c6b24222fef9c020ab50312fddd7c0a |
| publicationDate |
1996-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0817831-A |
| titleOfInvention |
Method for forming metal layer and silicon dioxide layer on flat surface |
| abstract |
(57) [Abstract] [PROBLEMS] To provide a method for forming a structure having a metal layer and a silicon dioxide layer of the same flat surface on a substrate. [Configuration] Al-Cu metal layer pattern 72 on a substrate 70. Is formed and a silicon dioxide layer 74 is deposited thereon. The upper surface of the substrate is chemically mechanically polished using a basic slurry containing silica particles until the surfaces of the metal layer pattern 72 and the silicon dioxide layer 74 become substantially the same flat surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6917076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6740590-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6527818-B2 |
| priorityDate |
1985-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |