http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0817744-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1994-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad |
| publicationDate | 1996-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0817744-A |
| titleOfInvention | Helicon wave plasma device and plasma CVD method using the same |
| abstract | (57) and good step coverage of the SiO x film formed by using the Abstract] OBJECTIVE TEOS, the SiO x film having both good film quality of the SiO x film formed by using SiH 4 formed To film. [Structure] High frequency antenna 2 of helicon wave plasma device And it can be switched to any of the intermittent / continuous by the switch 14 switches the high frequency is applied to, and helicon wave plasma P H contributes to the transport of the outer peripheral side solenoid coil 3 The ON / OFF switch 17 can be used to switch the application / interruption of the current to b to freely change the plasma density in the bell jar 1 and in the vicinity of the wafer W. If TEOS is dissociated in a low density plasma, a SiO x film with excellent step coverage can be formed by utilizing the good fluidity of the film forming precursor, and if SiH 4 is dissociated in a high density plasma. As a result, it is possible to form a dense SiO x film with little residual components and excellent water resistance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107045999-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107045999-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10424594-B2 |
| priorityDate | 1994-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.