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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-72
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filingDate 1994-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4f619eedbcaba9a1b92e4939100d2f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c9bb8da6bdcd209a1d6496abe633b66
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publicationDate 1996-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08173759-A
titleOfInvention Exhaust gas treatment agent
abstract (57) [Summary] [Objective] An inorganic group V compound in the exhaust gas of a III-V group compound semiconductor thin film manufacturing process is treated safely by reducing heat generation. [Structure] An exhaust gas treating agent is prepared by mixing basic copper carbonate with anatase-type fine titanium oxide particles. Basic copper carbonate renders the inorganic group V compound harmless. The anatase type fine particle titanium oxide improves the moldability during production.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006508798-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8568672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012107201-A1
priorityDate 1994-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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