http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08172201-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 1994-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ea95cc3f2c6d573c31ce7572ad9bc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5b7be0bf2c040ca156b745becaf6d3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce8048dac774a4511906cde3a574ca6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96bda1ed7b5c7590272e4753eba82add |
| publicationDate | 1996-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08172201-A |
| titleOfInvention | Thin film manufacturing method and thin film transistor |
| abstract | (57) [Abstract] [Purpose] To provide a thin film transistor that is less likely to change in characteristics. [Structure] Amorphous silicon fluoride 2 is formed on a transparent glass substrate 1. Then, it is crystallized by laser annealing to form an active semiconductor layer 4 made of polycrystalline silicon, and processed into an island shape. Silicon dioxide is formed thereon as the gate insulating layer 5. Next, the gate electrode 6 is formed. Then, using the gate electrode 6 as a mask, impurities are introduced into a partial region of the semiconductor thin film to form the source region 7 and the drain region 8. After forming the interlayer insulating layer 9 thereon, the contact hole and the source electrode 10 are formed. The drain electrode 11 is formed to complete the thin film transistor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006024946-A |
| priorityDate | 1994-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.